Normal view
MARC view
Entry Topical Term
001 - CONTROL NUMBER
- control field: 3928
003 - CONTROL NUMBER IDENTIFIER
- control field: IN-BhIIT
005 - DATE AND TIME OF LATEST TRANSACTION
- control field: 20180711130617.0
008 - FIXED-LENGTH DATA ELEMENTS
- fixed length control field: 180711|| aca||aabn | a|a d
040 ## - CATALOGING SOURCE
- Original cataloging agency: IN-BhIIT
- Transcribing agency: IN-BhIIT
150 ## - HEADING--TOPICAL TERM
- Topical term or geographic name entry element:
- General subdivision: 4H- Sic mesfet
- General subdivision: trapping effects
- General subdivision: interface state density
- General subdivision: dc model
- General subdivision: capacitance model
- General subdivision: microwave model
- General subdivision: scattering parameters
670 ## - SOURCE DATA FOUND
- Source citation: Work cat.: (IN-BhIIT): Rao , M.Hema Lata 3927, MODELING OF 4H-SiC MESFETs WITH SUBSTRATE AND SURFACE TRAPPING EFFECTS /, 2017 .