Normal view MARC view

4H- Sic mesfet trapping effects interface state density dc model capacitance model microwave model scattering parameters (Topical Term)

Number of records used in: 1
Preferred form: 4H- Sic mesfet trapping effects interface state density dc model capacitance model microwave model scattering parameters

Machine generated authority record.

Work cat.: (IN-BhIIT): Rao , M.Hema Lata 3927, MODELING OF 4H-SiC MESFETs WITH SUBSTRATE AND SURFACE TRAPPING EFFECTS /, 2017 .

Central Library, Indian Institute of Technology Bhubaneswar, 4th Floor, Administrative Building, Argul, Khordha, PIN-752050, Odisha, India
Phone: +91-674-7138750 | Email: circulation.library@iitbbs.ac.in (For circulation related queries),
Email: info.library@iitbbs.ac.in (For other queries)

Powered by Koha