000 | nam a22 7a 4500 | ||
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999 |
_c8918 _d8918 |
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008 | 180711b xxu||||| |||| 00| 0 eng d | ||
041 | _aeng | ||
082 |
_a621.38 _bRAO/M |
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100 |
_aRao,M.Hema Lata _93927 |
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245 |
_aModeling of 4H-sic mesfets with substrate and surface trapping effects (with CD) / _cby M.Hema Lata Rao and N.V.L.N. Murty |
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260 |
_aBhubaneswar : _bIIT, _c2017. |
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300 |
_axxii,194p. _bill .; _c29 c.m. |
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500 | _aThis Thesis accompany CD ROM | ||
650 | 0 | 0 |
_x4H- Sic mesfet _xtrapping effects _xinterface state density _xdc model _xcapacitance model _xmicrowave model _xscattering parameters _93928 |
700 |
_aMurty ,N.V.L.N. _93929 |
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942 |
_2ddc _cTH |